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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220Fa package *High-speed switching *Large collector power dissipation APPLICATIONS *For power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD2000 Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 80 60 6 4 8 1 35 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2000 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=25mA , IB=0 IC=4A;IB=0.4A IC=4A;IB=0.4A VCB=80V;IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=4A ; VCE=4V IC=0.2A; VCE=12V;f=10MHz 70 20 80 MHz MIN 60 1.5 2.0 100 100 250 TYP. MAX UNIT V V V A A Switching times Turn-on time Storage time Fall time IC=4A ;IB1=0.4A IB2=-0.4A;VCC=50V 0.3 1.0 0.2 s s s ton ts tf hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2000 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2000 4 |
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